کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940934 | 1513198 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High temperature performance of Si:HfO2 based long channel Double Gate Ferroelectric Junctionless Transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In this work, we present a study that explores the suitability of Double Gate Ferroelectric Junctionless Transistor (DGFJL) incorporating Si:HfO2 for high temperature applications. At present, very few studies are focussed on Si:HfO2 to investigate its integrability in the present CMOS design space. Therefore, in the present study, using analytical modeling and TCAD simulations, it is demonstrated that Si:HfO2 based DGFJL exhibits superior performance in terms of substantial gain, reduced leakage currents, improved current drivability and high Ion/Ioff ratio at elevated temperatures as compared to the DGJL counterpart. The study, thus, highlights the fact that DGFJL is a potential candidate for device applications at high temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 103, March 2017, Pages 78-84
Journal: Superlattices and Microstructures - Volume 103, March 2017, Pages 78-84
نویسندگان
Hema Mehta, Harsupreet Kaur,