کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7940984 1513198 2017 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A study of the coupling between LO phonons and plasmons in InP p-i-n diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A study of the coupling between LO phonons and plasmons in InP p-i-n diodes
چکیده انگلیسی
This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 103, March 2017, Pages 213-220
نویسندگان
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