کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941154 | 1513199 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoelectric and passivation properties of atomic layer deposited gradient AZO thin film
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gradient Al-doped ZnO (AZO) thin films were deposited at 150 °C by atomic layer deposition (ALD) with different Al concentration gradient, and their photoelectric and passivation properties were investigated. With increasing Al concentration gradient from 0.09 to 1.21%/nm, Hall-effect showed that the resistivity of gradient AZO thin films deteriorates. The minimal resistivity (2.81 Ã 10â3 Ω cm), the maximum mobility (9.03 cm2/Vs) and the maximum carrier concentration (2.46 Ã 1020 cmâ3) were obtained at 0.09%/nm Al concentration gradient. The average transmittance of all the gradient AZO films can be more than 85% in the visible region. In addition, gradient AZO thin films demonstrated excellent passivation properties. The maximum minority carrier lifetime (120.6 μs) and the minimal surface recombination velocity (â¤208.3 cm/s) were obtained at 0.71%/nm Al concentration gradient.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 102, February 2017, Pages 314-322
Journal: Superlattices and Microstructures - Volume 102, February 2017, Pages 314-322
نویسندگان
Bin Zhao, Li-dan Tang, Bing Wang, Yi Jia, Jia-heng Feng,