کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941275 | 1513200 | 2017 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In this work, we perform a comparative analysis between single and dual metal dielectrically modulated tunnel field-effect transistors (DMTFETs) for the application of label free biosensor. For this purpose, two different gate material with work-function as ÏM1 and ÏM2 are used in short-gate DMTFET, where ÏM1 represents the work-function of gate M1 near to the drain end, while ÏM2 denotes the work-function of gate M2 near to the source end. A nanogap cavity in the gate dielectric is formed by removing the selected portion of gate oxide for sensing the biomolecules. To investigate the sensitivity of these biosensors, dielectric constant and charge density within the cavity region are considered as governing parameters. The work-function of gate M2 is optimized and considered less than M1 to achieve abruptness at the source/channel junction, which results in better tunneling and improved ON-state current. The ATLAS device simulations show that dual metal SG-DMTFETs attains higher ON-state current and drain current sensitivity as compared to its counterpart device. Finally, a dual metal short-gate (DSG) biosensor is compared with the single metal short-gate (SG), single metal full-gate (FG), and dual metal full-gate (DFG) biosensors to analyse structurally enhanced conjugation effect on gate-channel coupling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 219-227
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 219-227
نویسندگان
Madhulika Verma, Dheeraj Sharma, Sunil Pandey, Kaushal Nigam, P.N. Kondekar,