کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941301 | 1513200 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5Â nm DGMOSFET
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5Â nm DGMOSFET Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5Â nm DGMOSFET](/preview/png/7941301.png)
چکیده انگلیسی
This paper has proposed the optimum design rules as investigating subthreshold characteristics of 5Â nm DG (Double Gate) MOSFET for top/bottom gate flat-band voltages and oxide thicknesses. The difference of top gate voltages between on-current (10â7A) and off-current (10â12A) is specified as ÎVonâoff, and the top-gate voltage for the on-current is defined as the threshold voltage. ÎVonâoff and the threshold voltage are derived from equations for the drain current and gate voltage for various top/bottom gate flat-band voltages and oxide thicknesses, and compared with those for symmetric structure having equal top/bottom gate flat-band voltages and oxide thicknesses. As a result, the potential distributions for top/bottom gate flat-band voltages and oxide thicknesses influence on directly the tunneling current, which greatly changes ÎVonâoff and the threshold voltage in subthreshold region. It is established that the top flat-band voltage and oxide thickness have to be larger than the bottom flat-band voltage and oxide thickness to reduce ÎVonâoff and threshold voltage, compared with those of symmetric structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 285-292
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 285-292
نویسندگان
Hakkee Jung, Sima Dimitrijev,