کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941318 | 1513200 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, a novel 4H-SiC metal semiconductor field effect transistor with serpentine channel (SC-MESFET) is proposed which the gate-drain drift region shifts downward integrally compared to the gate-source drift region. With the depth of the gate-drain shift increasing, the channel electric field and the gate depletion layer have been modulated. The simulated results show that the drain saturation current and breakdown voltage of the SC-MESFET are about 21.5% and 46.7% larger than that of the conventional double-recessed 4H-SiC MESFET (DR-MESFET). The gate-source capacitance of proposed structure is also improved from 0.59 pF/mm to 0.51 pF/mm and the DC transconductance of the SC-MESFET is very close to that of the DR-MESFET at the bias conditions of Vgs = 0 V and Vds = 40 V, which results in better RF characteristics. All of the results show that the novel 4H-SiC MESFET with serpentine channel has superior electrical characteristics and performances.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 315-322
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 315-322
نویسندگان
Hujun Jia, Yehui Luo, Hang Zhang, Ding Xing, Peimiao Ma,