Investigation of the energy and structural parameters of strained (β-InSe)n/(In4Se3)m superlattices

Theoretical calculation of the components of the strain tensors εij, which corresponds to the equilibrium state of the heterojunction has been conducted. Pikus' method of invariants used for calculation of dispersion laws for β-InSe and In4Se3 crystals. The influence of deformation on the charge carriers energy in these heterostructures is analyzed. Within the effective mass approximation minibands energies of the (β-InSe)n/(In4Se3)m superlattices with different ratios of layers thickness n/m have been calculated.