کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941637 | 1513201 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 Ã 1018-1.1 Ã 1019 cmâ3, hole mobilities between 1.6 and 1.9 cm2 Vâ1 sâ1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 468-473
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 468-473
نویسندگان
Zhiyuan Zhang, Jingyun Huang, Shanshan Chen, Xinhua Pan, Lingxiang Chen, Zhizhen Ye,