کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941775 | 1513201 | 2016 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Short channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions for TFETs and investigate their short-channel effects by using two-dimensional simulations. It is shown that the semiconductor bandgap has to be properly considered together with the drain-induced barrier thinning in studying short-channel effects because scaling down the bandgap considerably deteriorates short-channel effects in TFETs. Among the basic configurations of Si/SiGe heterojunctions, the slantingly graded Si/SiGe heterostructure is most excellent in optimizing the electrical characteristics of the extremely scaled TFETs without short-channel effects. The slantingly graded Si/SiGe TFET with superior short-channel performance exhibits a potential device for low power and high packaging density integrated circuits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 857-866
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 857-866
نویسندگان
Nguyen Dang Chien, Chun-Hsing Shih,