کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941805 | 1513201 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy
ترجمه فارسی عنوان
وابستگی بخشی از انتشار تراهرتز سیلیکون متخلخل با استفاده از طیف سنجی زمان سنجی هندسه بازتاب هندسی
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کلمات کلیدی
سیلیکون متخلخل، قطر بینی، جذب، طیف سنجی تهراهتز،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Porosity dependent terahertz emission of porous silicon (PSi) was studied. The PSi samples were fabricated via electrochemical etching of boron-doped (100) silicon in a solution containing 48% hydrofluoric acid, deionized water and absolute ethanol in a 1:3:4 volumetric ratio. The porosity was controlled by varying the supplied anodic current for each sample. The samples were then optically characterized via normal incidence reflectance spectroscopy to obtain values for their respective refractive indices and porosities. Absorbance of each sample was also computed using the data from its respective reflectance spectrum. Terahertz emission of each sample was acquired through terahertz - time domain spectroscopy. A decreasing trend in the THz signal power was observed as the porosity of each PSi was increased. This was caused by the decrease in the absorption strength as the silicon crystallite size in the PSi was minimized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 892-899
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 892-899
نویسندگان
Arvin I. Mabilangan, Lorenzo P. Jr., Maria Angela B. Faustino, Joselito E. Muldera, Neil Irvin F. Cabello, Elmer S. Estacio, Arnel A. Salvador, Armando S. Somintac,