کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941848 | 1513202 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the novel 4HSiC trench MOSFET with non-uniform doping floating islands
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, a novel 4HSiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with non-uniform doping floating islands is proposed, using a Gaussian doping profile in the floating islands. The feature of the non-uniform doping floating island is that the doping concentration of upper part is higher than the lower part. The electric field between the floating island and drift region can be reduced by the decrease in the doping concentration of the lower part. At the same time, the high doping concentration for the upper part of the floating island is utilized, so that gate oxide layer at the sharp corner of the trench gate bottom cannot be broken down in advance. The simulation results indicate that the breakdown voltage of the novel structure can increase by 48%, compared with the structure with the uniform doping (6Â ÃÂ 1017Â cmâ3) floating island. Furthermore, the switching and gate charge characteristics of the UMOSFETs with uniform and Gaussian doping floating islands have been simulated using two simple switching circuits. The results indicate that changing the doping concentration of the floating islands has no negative effect on the switching characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 62-66
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 62-66
نویسندگان
Qingwen Song, Xiaoyan Tang, Ruiyan Tian, Yimeng Zhang, Tao Guo, Guannan Tang, Shuai Yang, Hao Yuan, Yanjing He,