کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941873 | 1513202 | 2016 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Slip system analysis and X-ray topographic study on β-Ga2O3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Slip system and possible dislocation characters in a wide-bandgap semiconductor β-Ga2O3 have been studied. The space lattice is monoclinic in which oxygen sublattice has a distorted cubic close-packed structure consisting of {2¯01}, {101}, {3¯10} and {3¯1¯0} planes. The shortest and second shortest translation vectors on each plane are possible Burgers vectors of a dislocation. Dislocations in a (2¯01)-oriented wafer were observed by means of synchrotron radiation X-ray topography with reflection geometry. The observed dislocations were analyzed in relation to the slip system. Using the gâ·bâ invisibility criterion and the obtained slip system, Burgers vectors of some typical dislocations were identified.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 99-103
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 99-103
نویسندگان
Hirotaka Yamaguchi, Akito Kuramata, Takekazu Masui,