کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941873 1513202 2016 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Slip system analysis and X-ray topographic study on β-Ga2O3
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Slip system analysis and X-ray topographic study on β-Ga2O3
چکیده انگلیسی
Slip system and possible dislocation characters in a wide-bandgap semiconductor β-Ga2O3 have been studied. The space lattice is monoclinic in which oxygen sublattice has a distorted cubic close-packed structure consisting of {2¯01}, {101}, {3¯10} and {3¯1¯0} planes. The shortest and second shortest translation vectors on each plane are possible Burgers vectors of a dislocation. Dislocations in a (2¯01)-oriented wafer were observed by means of synchrotron radiation X-ray topography with reflection geometry. The observed dislocations were analyzed in relation to the slip system. Using the g→·b→ invisibility criterion and the obtained slip system, Burgers vectors of some typical dislocations were identified.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 99-103
نویسندگان
, , ,