Diffusion length and grain boundary recombination activity determination by means of induced current methods

The application of induced current methods for a quantitative description of multicrystalline silicon solar cell properties is demonstrated. For the minority carriers' diffusion length (L) and grain boundary recombination velocity (Vs) determination three types of measurements were used. They included the measurement of EBIC signal dependence on electron beam energy and of EBIC and XBIC grain boundary contrast profiles. The L and Vs values obtained by means of minimization the residual function between measured and model induced current curves are presented. The inaccuracy of obtained parameters is discussed for each of three types of measurements.