کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7942194 1513213 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics
چکیده انگلیسی
We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 365-370
نویسندگان
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