Transport properties of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well including temperature and magnetic field effects

We investigate the mobility and resistivity of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well at arbitrary temperatures for two cases: with and without in-plane magnetic field. We consider two scattering mechanisms: remote charged-impurity and interface-roughness scattering. We study the dependence of transport properties on the carrier density, layer thickness, magnetic field and temperature. Our results can be used to obtain information about the scattering mechanisms in the SiGe/Si/SiGe quantum well.