کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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79979 | 49370 | 2009 | 6 صفحه PDF | دانلود رایگان |
Our progress in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and current understanding of fundamental device physics are presented. In a-Si:H/c-Si cells, device performance is strongly dependent on the quality of the a-Si:H/c-Si heterojunction. Four topics are crucial to minimize recombination at the junction and thereby maximize cell efficiency: wet-chemical pre-treatment of the c-Si surface prior to a-Si:H deposition; optimum a-Si:H doping; thermal and plasma post-treatments of the a-Si:H/c-Si structure. By optimizing these aspects using specifically developed characterization methods, we were able to realize (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si cells with up to 18.5% and 19.8% efficiency, respectively.
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 905–910