کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79984 | 49370 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microscopic homogeneity of emitters formed on textured silicon using in-line diffusion and phosphoric acid as the dopant source
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An important point of comparison between POCl3 emitter diffusion in a quartz tube furnace and in-line diffusion using sprayed phosphoric acid is the microscopic homogeneity of the diffusion, i.e. the homogeneity along the texture of a silicon surface. Two characterization methods were used. In each case, the cross-section of cleaved mc-Si and Cz-Si textured samples was observed in a scanning electron microscope (SEM). First, the thickness of the phosphosilicate glass (PSG) was measured. Second, the emitter was observed on SEM images which showed the n-type silicon as a darker region. The results show comparable homogeneity for in-line and POCl3 diffusion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 932–935
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 932–935
نویسندگان
Catherine Voyer, Tobias Buettner, Robert Bock, Daniel Biro, Ralf Preu,