کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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80441 | 49386 | 2008 | 5 صفحه PDF | دانلود رایگان |
We report the electro deposition of In2S3 buffer layers for CuInS2 solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential transfer to large volume industrial production. Different bath compositions and electro deposition parameters were studied. The obtained films exhibited complete substrate coverage, confirmed by SEM and XPS. In/S ratio close to 2/3 was obtained. XPS measurements detected the presence of indium hydroxide, transforming into oxide upon anneal at 200 °C. Maximum photoelectric conversion efficiency of 7.1% was obtained, limited mainly by a low fill factor (51%). Further process optimization is expected to lead to efficiencies comparable to CdS buffers. So far, open-circuit voltages as high as 660 mV were demonstrated.
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 10, October 2008, Pages 1274–1278