کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618699 | 49464 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MIS-stimulated back-surface passivation of interdigitated back-contacts solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The possibility of surface recombination losses reduction on the rear side of interdigitated back-contact solar cells by field-effect passivation is investigated. To provide field-effect passivation, an additional biased metal/insulator/semiconductor (MIS) structure is formed between n++ and p+-doped regions. The source of the bias is the potential that appears in the solar cell under illumination. Two-dimensional (2D) numerical simulations were performed to determine the best passivation conditions. In particular, the influence of symmetric and asymmetric capture cross sections for electrons and holes at the rear side of the cell is simulated and the advantage of symmetric capture cross section for this type of passivation is discussed. Experimental and calculated data are compared for Si/SiO2 interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 549-555
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 549-555
نویسندگان
O. Nichiporuk, A. Kaminski, V. Skryshevsky, S. Litvinenko,