کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670464 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of defects at the interface between high-k thin films and (1Â 0Â 0) silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated Pb-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 74-77
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 74-77
نویسندگان
B.J. Jones, R.C. Barklie,