کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670607 | 1450404 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Maskless lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Maskless lithography Maskless lithography](/preview/png/9670607.png)
چکیده انگلیسی
The high and rising cost of photomasks (largely driven by writing times exceeding 24 h) is driving the exploration of maskless lithography for applications requiring throughput about 1Â cm2/s which is about one tenth that of an optical projection exposure system. Achieving this throughput with charged particle lithography requires currents 10,000 times larger than those presently used and hence sets up the need for charged particle optics radically different from those being used today. Achieving this throughput with optical maskless lithography at the required minimum features sizes of 65Â nm and below is a serious engineering challenge for the spatial light modulator. Meeting 10% or even 1% of the throughput requirement might still result in mask writing and inspection technologies that would lead to significantly less expensive masks. Furthermore, relaxing the requirements on control of individual edge positions (i.e., a fixed-shape projector) would significantly ease the above challenges.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 381-392
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 381-392
نویسندگان
R. Fabian Pease,