کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699138 1461440 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
چکیده انگلیسی
In this paper the strain and electrical properties of epitaxial in situ B-doped (1018-1021 cm−3) SiGeC layers (23, 28% Ge and 0, 0.5% C) has been investigated. The growth rate was shown to have a significant increase at 3×10−2 mTorr diborane partial pressure. This point coincides with an enhancement in boron incorporation, which was explained by the strain compensation effect of boron in the highly strained SiGeC layers. In these samples, the total Ge and C content was shown to remain constant with increasing diborane partial pressure. The substitutional/active dopant concentration in SiGe layers was obtained by high-resolution X-ray diffraction by measuring the strain compensation effect of boron. The interaction between C and B in SiGe matrix was also investigated. This was compared with the active dopant concentration obtained from Hall measurements in order to achieve a Hall scattering factor of 0.3-0.7 for dopant concentrations between 3×1018 and 5×1021 cm−3. The resistivity values of these layers were in the range 2×10−2-4×10−4 Ω cm. Finally, it was shown that boron atoms in SiGeC layers locate preferably at substitutional sites in contrary to carbon atoms at both substitutional and interstitial sites.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 97-101
نویسندگان
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