کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699195 1461440 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
چکیده انگلیسی
The process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single 200 mm SiGe substrate is reported in this paper. Si0.76Ge0.24 virtual substrates with a strained Si layer were manufactured in a LPCVD epitaxy reactor. The strained silicon layer enhances the electron mobility in NMOS transistors and the hole mobility in PMOS transistors. The lower bandgap of the Si0.76Ge0.24 material improves the infrared responsivity of the PIN photodiodes at wavelengths up to 1310 nm. Results of process integration and electro-optical characterization of the manufactured devices are shown in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 429-433
نویسندگان
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