کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789531 | 1512911 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier confinement in disordered GaAs/AlAs superlattices probed by capacitance-voltage experiments
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of the intentional disorder in (GaAs)m/(AlAs)6 superlattices were studied using transport techniques. Evidences of a strong electron localization in the superlattices even in the presence of extend states were found. We interpret this result taking into account the disorder which causes the local breakdown of the coherence of the miniband transport and, therefore, give rise to the electron localization. In order to support our experiments, we numerically calculate the capacitance-voltage characteristics of the superlattices and the results were found in good agreement with the measured ones.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 69-73
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 69-73
نویسندگان
Adenilson J. Chiquito, Juliana Lopes,