کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789533 | 1512911 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stability and electronic structure of single-walled InN nanotubes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Based on density functional theory calculations, we predict the stability and electronic structures of single-walled indium nitride (InN) nanotubes. Compared with other group III-nitride nanotubes with a similar diameter, strain energies of InN nanotubes relative to their graphitic sheet are the lowest, suggesting the possibility of the formation of InN nanotubes. Considering the stability of a graphitic InN sheet, InN nanotubes are in metastable states with the stability between GaN nanotubes and AlN nanotubes. Contrary to the case of carbon nanotubes and BN nanotubes, the bond-length of both horizontal and vertical In-N bonds in InN nanotubes decreases as the tube diameter increases. InN nanotubes are all semiconductors with an almost constant band gap of about 1Â eV. The existence of a direct gap in zigzag InN nanotubes and the small band gap indicate that they may have potential applications in light emitting devices and solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 81-85
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 81-85
نویسندگان
Zekan Qian, Shimin Hou, Jiaxing Zhang, Rui Li, Ziyong Shen, Xingyu Zhao, Zengquan Xue,