کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789751 | 1512915 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We report Raman scattering studies of optical phonons in InGaAs/GaAs quantum dot (QD) structures grown by atomic layer molecular beam epitaxy to explore formation of QDs and relaxation of strain. The QDs were grown by alternate supply of InAs and GaAs with deposition periods of n=3, 5, and 7. Raman scattering reveals longitudinal optical (LO) and transverse optical phonon responses related to the sample structure. Importantly, a Raman response at â¼237Â cmâ1 was observed. This Raman response is attributed to the InAs-like LO phonons of InGaAs QDs, indicating clear evidence of the formation of the QDs. Moreover, both the GaAs and the GaAs-like LO phonon energies are shifted downward with increasing n from 3 to 7, suggesting that the strain relaxation occurs and the QDs grow in size.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 115-118
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 115-118
نویسندگان
W.J. Choi, H. Rho, J.D. Song, J.I. Lee, Y.H. Cho,