کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789755 | 1512915 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective growth of GaInN quantum dot structures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Selective growth of GaInN quantum dot structures Selective growth of GaInN quantum dot structures](/preview/png/9789755.png)
چکیده انگلیسی
In this work, we present an approach to fabricate GaInN quantum dots. The idea is to have a complete control of the position of the quantum dot during the growth and to use this positioned dot for future functioning. For this purpose we have prepared templates with selectively grown GaN pyramids by MOVPE. After proper adjustment of the GaN growth we have overgrown these templates with InGaN to form the quantum dots on top of the pyramids. Finally the structures were capped with GaN and photoluminescence measurements were performed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 133-137
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 133-137
نویسندگان
V. Perez-Solorzano, M. Ubl, H. Gräbeldinger, A. Gröning, H. Schweizer, M. Jetter,