کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829556 | 1524494 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Arsenic surface segregation during in situ doped silicon and Si1âxGex molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Surface segregation has been a major factor limiting dopant incorporation in silicon and Si1âxGex epitaxy. This paper discusses arsenic incorporation and surface segregation during mixed gas- and solid-source molecular beam epitaxy of silicon and Si1âxGex. The use of Si2H6 gas as the silicon source and careful control of growth conditions enable calculation of the surface arsenic concentration during growth from its effect on the gas-source growth rate. A wide range of surface arsenic concentrations were examined to determine the near-equilibrium relationship between the surface arsenic concentrations and the incorporated arsenic concentrations in the silicon epilayers. A new model based on 2-dimensional islanding of surface arsenic dimers is proposed to explain the observed segregation relationship and the changing surface morphology. The effects of germanium on arsenic surface segregation in Si1âxGex are also discussed qualitatively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 334-343
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 334-343
نویسندگان
Xian Liu, Qiang Tang, James S. Harris, Theodore I. Kamins,