کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829612 | 1524495 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD](/preview/png/9829612.png)
چکیده انگلیسی
GaN-based InGaN/GaN multiple quantum wells (MQWs) structure having a high-quality epilayer and coherent periodicity was grown by metalorganic chemical vapor deposition. After thermal annealing of InGaN/GaN MQWs, the increase in temperature and annealing time caused the intermixing between the barrier and the wells, which in turn caused a decrease in periodicity on the high-resolution X-ray diffraction patterns. Thereby, we confirmed that the structural performance of InGaN MQWs is successively degrading with increasing thermal annealing temperature. Especially, InGaN MQWs of the sample annealed at 950 °C were profoundly damaged. The cathodoluminescence (CL) measurement indicated that MQWs emission intensity decreases with increasing thermal annealing temperature. Thus, the integrated CL intensity ratio of InGaN MQWs to GaN dramatically decreased while thermal annealing temperatures increased. This result caused the intermixing in MQWs to deteriorate the active layer performance. Furthermore, the peak position of MQWs showed a tendency of the red shift after high thermal annealing. It is suggested that the annealing-induced red shift in MQWs is attributed to the reduction of the inhomogeneity of the In content in the MQWs leading to the reduction of the quantized energies. Consequently, it indicates that the high temperature and the long-time thermal annealing would be inevitably followed by the structural destruction of InGaN MQWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 357-363
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 357-363
نویسندگان
T.S. Jeong, J.H. Kim, M.S. Han, K.Y. Lim, C.J. Youn,