کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829637 | 1524495 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High rate growth of thick diamond films by high-current hot-cathode PCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
On the basis of a conventional direct-current glow discharge plasma chemical vapor deposition (DC-PCVD), we succeeded in raising the deposition rate of diamond films to a large extent by increasing its discharge power. The maximum deposition rate reached about 20 μm/h. The quality of diamond films was also much improved. The maximum thermal conductivity of diamond films prepared by our process was 15.1 W/K cm. Diamond films with such high thermal conductivity can meet the need of many thermal management applications. In this paper, the influences of the deposition techniques on the characteristics of diamond films were studied experimentally from the viewpoint of discharge current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 539-544
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 539-544
نویسندگان
Yizhen Bai, Zengsun Jin, Xianyi Lv, Zhigang Jiang, Xuemei Han, Jiayu Wang, Hanhua Wu,