کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829756 | 1524498 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells](/preview/png/9829756.png)
چکیده انگلیسی
We compare the results of strain state analysis (SSA) and photoluminescence (PL) of six InGaN/GaN quantum well samples with un-doped, well-doped, and barrier-doped structures. Based on the SSA images, a strain relaxation model is proposed for describing the nanostructure differences between the three sets of sample of different doping conditions. In the barrier-doped samples, the hetero-structure-induced strains are fully relaxed such that spinodal decomposition is effectively induced. Therefore, strongly clustering nanostructures are observed. In the well-doped samples, strains are partially relaxed and the spinodal decomposition process can be slightly induced. Hence, weaker composition fluctuations are observed. Then, in the un-doped samples, the un-relaxed strains result in higher miscibility between InN and GaN, leading to the relatively more uniform composition distributions. Between the low- and high-indium samples, higher indium content leads to a stronger clustering behavior. The strain relaxations in the well-doped and barrier-doped samples result in their unclear S-shaped behaviors of PL spectral peaks. The enhanced carrier localization and reduced quantum-confined Stark effect in the barrier-doped samples are responsible for their significant increases of radiative efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 55-64
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 55-64
نویسندگان
Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, Andreas Rosenauer,