کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829756 1524498 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells
چکیده انگلیسی
We compare the results of strain state analysis (SSA) and photoluminescence (PL) of six InGaN/GaN quantum well samples with un-doped, well-doped, and barrier-doped structures. Based on the SSA images, a strain relaxation model is proposed for describing the nanostructure differences between the three sets of sample of different doping conditions. In the barrier-doped samples, the hetero-structure-induced strains are fully relaxed such that spinodal decomposition is effectively induced. Therefore, strongly clustering nanostructures are observed. In the well-doped samples, strains are partially relaxed and the spinodal decomposition process can be slightly induced. Hence, weaker composition fluctuations are observed. Then, in the un-doped samples, the un-relaxed strains result in higher miscibility between InN and GaN, leading to the relatively more uniform composition distributions. Between the low- and high-indium samples, higher indium content leads to a stronger clustering behavior. The strain relaxations in the well-doped and barrier-doped samples result in their unclear S-shaped behaviors of PL spectral peaks. The enhanced carrier localization and reduced quantum-confined Stark effect in the barrier-doped samples are responsible for their significant increases of radiative efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 1–2, 15 May 2005, Pages 55-64
نویسندگان
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