Numerical simulation of liquid phase electro-epitaxial selective area growth

A computational model for semiconductor crystal growth on a partially masked substrate under simplified liquid phase electroepitaxy conditions is developed. The model assumes isothermal diffusional growth, which is enhanced by applied DC current through crystal-solution interface. A finite-difference, front-tracking method is used to numerically evolve the interface. Computed examples show strong influence of the electromigration on growth rates in vertical and lateral directions and the dependence of growth on electrical resistance of mask material, and on the wetting contact angle.