کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829786 | 1524499 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium segregation during multilayer InAs/GaAs(0Â 0Â 1) quantum dot formation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Indium segregation during the growth of multilayer InAs/GaAs(0 0 1) quantum dot (QD) structures has been studied using reflection high-energy electron diffraction (RHEED) measurements of the critical coverage (θcrit) for second layer QD formation. A model bilayer structure was used in order to separate the effects of segregation and strain. The structure comprises an upper QD layer formed on top of a buried two-dimensional InAs layer. Growth temperature and the GaAs spacer layer thickness (S) are both found to have a significant effect on θcrit. Indium segregation during growth of the capping layer leads to the presence of a surface In adatom population prior to deposition of the second InAs layer. Segregation occurs for S up to 8 nm at 510 °C, this value being reduced by â¼50% at 450 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 57-60
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 57-60
نویسندگان
P. Howe, E.C. Le Ru, R. Murray, T.S. Jones,