کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829823 | 1524499 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A possibility of In-N fragments incorporation in InGaAsN MBE growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated a possibility of the site-controlled InGaAsN epitaxy by using a new source material of hexakis-diethylamido-diindium ([In{N(C2H5)2}3]2). In the site-controlled epitaxy of the InGaAsN layer, the N atoms should be incorporated randomly and should also preferentially form In-N bonds during growth. The new source has been developed to satisfy these two requirements for the site-controlled epitaxy. Single-crystalline InN layer has been successfully obtained on a nitrided α-Al2O3 substrate by supplying only a [In{N(C2H5)2}3]2 beam. Polycrystalline InNAs has also been obtained on a nitrided α-Al2O3 substrate by [In{N(C2H5)2}3]2 and an As4 beam supplied simultaneously. Furthermore, phase separation into GaAs and InN phases has been observed in the layers grown under simultaneous irradiation of Ga, As4 and [In{N(C2H5)2}3]2 beams on a nitrided α-Al2O3 substrate. The results strongly indicate that site-controlled epitaxy can be expected to be achieved by using new source materials, such as [In{N(C2H5)2}3]2 that can produce the In-N fragments efficiently.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 249-253
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 249-253
نویسندگان
T. Yamaguchi, M. Uchida, A. Yamamoto, A. Hashimoto,