AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1Â 1Â 1)

In this paper, we report on the properties of AlGaN/GaN/AlGaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the AlGaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, the static performances of long gate length devices demonstrate their interest for power applications.