کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829853 | 1524499 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band gap widening of MBE grown InN layers by impurity incorporation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Band gap widening due to impurity contamination such as oxygen (O) incorporation into InN layers has been observed by growth without PBN sealing in the RF-plasma reactor. Furthermore, V/III ratio dependence of the absorption edge of InN layers grown under O-contaminated background has shown a strong correlation with that of the residual carrier concentration. A clearly red-shift of the absorption edge has been also observed for InN layers grown under the simultaneous irradiation of Ga beam. These results strongly indicate that O may be one of the strong candidates of impurity identified as an origin of band gap widening of InN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 402-405
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 402-405
نویسندگان
Y. Uesaka, A. Yamamoto, A. Hashimoto,