RHEED study of GaAs(3Â 3Â 1)B surface

In this paper, the growth dynamics and the surface morphology of the GaAs(3 3 1)B surface have been studied by both in situ reflection high-energy election diffraction (RHEED) and in situ scanning tunneling microscopy (STM). For the first time, a RHEED oscillation is reported on high index GaAs(3 3 1)B faceted surface with (1 1 0) and (1 1 1)B facets. The RHEED oscillation was observed only along the [1¯1¯6] direction. Absence of any RHEED oscillations along [116¯], [1¯10], and [11¯0] indicates a possible growth model in which the GaAs(3 3 1)B surface is moving frontward through fractional growth of its (1 1 1)B facets. These results help us to better understand the nature of RHEED oscillation on high index GaAs.