کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830080 | 1524503 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon-doped GaAs and InGaAs grown by solid source molecular beam epitaxy and effect of III/V ratio on their properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Carbon-doped gallium arsenide (GaAs:C) and indium gallium arsenide (InGaAs:C) samples were grown by solid source molecular epitaxy using carbon tetrabromide (CBr4) as a carbon source. The samples were characterized using Hall and photoluminescence measurements. For the purpose of investigation, GaAs:C and InGaAs:C samples were grown using different arsenic to group III (V/III) ratio. This study showed that V/III ratio affects the formation of mid-gap non-radiative recombination centers in GaAs:C and InGaAs:C. It is also found that the mid-gap recombination centers were greatly suppressed when V/III ratio of 25 and 20 were used in growth of GaAs:C and InGaAs:C layers, respectively. Furthermore, GaAs:C-based and InGaAs:C-based heterojunction bipolar transistors have been grown and their DC performance characterized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 404-409
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 404-409
نویسندگان
K.H. Tan, S.F. Yoon, R. Zhang, Z.Z. Sun,