Keywords: 68.60.-p; 71.55.âI; 71.55.Jv; 68.60.âp; 68.65.âk; Silica thin film; Polysilazane; Ultra thin barriers; Spin-on dielectrics; SOD; FTIR; Photoluminescence; Structural properties; Surface defects; Dioxasilirane; Silylene;
مقالات ISI 68.60.-p (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films
Keywords: 68.60.-p; 32.30.âr; 68.37.Xy; 68.60.âp; 79.20.Ds; 81.07.âb; 87.64.Dz; SrAl2O4:Eu2+,Dy3+; Thin films; PLD; Photoluminescence;
Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy
Keywords: 68.60.-p; 81.05.zx; 61.80.Ba; 68.60.âp; 66.30.Ny; Low-emissivity layer; Platinum film; Sputter-deposited; Annealing time;
High-temperature application of the low-emissivity Au/Ni films on alloys
Keywords: 68.60.-p; 81.05.ât; 61.80.Ba; 68.60.âp; 66.30.Ny; Low emissivity; Diffusion barrier; Au/Ni multilayer films; High-temperature application;
Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD
Keywords: 68.60.-p; 32.30.Rj; 33.20.Ea; 33.60.Fy; 52.77.Dq; 68.47.Gh; 68.55.âa; 68.60.âp; Microwave ECR plasma; MOCVD; Thin films; Y2O3; FAR-IR; GIXRD;
Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux
Keywords: 68.60.-p; A1. Defects; A1. Surface structure; A3. Superlattices; A3. Antimonides; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; 81.05.Ea; 68.35.Dv; 68.37.âd; 68.60.âp; 68.65.Cd; 81.15.Hi; 71.55.Eq; 81.15.Ef;
Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides
Keywords: 68.60.-p; 68.55.âa; 68.55.jd; 68.60.âp; 68.65.Ac; A1. Morphological stability; A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Hydrogenated diamond-like carbon film deposited on UHMWPE by RF-PECVD
Keywords: 68.60.-p; 81.15.Ef; 68.55.âa; 68.55.Jk; 68.60.âp; UHMWPE; Diamond-like carbon film; RF-PECVD; Tribology;
Investigation of CdS thin films by a near-field microwave microprobe
Keywords: 68.60.-p; 68.37.âd; 68.37.Uv; 68.55.âa; 68.60.âp; Near-field; Microwave microprobe; CdS; Annealing;
An application of Au thin-film emissivity barrier on Ni alloy
Keywords: 68.60.-p; 81.05.zx; 61.80.Ba; 68.60.âp; 66.30.Ny; Emissivity barrier; Au film; Interdiffusion;
One and two mode behaviors of surface phonon-polaritons of ternary mixed crystal films
Keywords: 68.60.-p; 68.47.âb; 71.36.+c; 68.60.âp; Surface phonon-polaritons; One and two mode behaviors; Ternary mixed crystal films;
Impact of organic contamination on laser-induced damage threshold of high reflectance coatings in vacuum
Keywords: 68.60.-p; 42.79.Wc; 68.60.âp; 78.67.Pt; Optical coatings; Laser-induced damage threshold; Organic contamination; Vacuum; Atmosphere; Protective gas;
Zinc oxide thin film synthesized by combustion chemical vapor deposition
Keywords: 68.60.-p; 68.35.âp; 68.60.âp; 81.05.ât; 81.05.Dz; 81.10.Bk; ZnO thin films; CCVD; Oxygen vacancies;
Structural study of thin films prepared from tungstate glass matrix by Raman and X-ray absorption spectroscopy
Keywords: 68.60.-p; 61.43.Er; 68.60.âp; 74.25.Gz; Glass; Tungsten; Thin film;
Thin films prepared from tungstate glass matrix
Keywords: 68.60.-p; 61.43.Er; 68.60.âp; 74.25.Gz; Glass; Tungsten; Thin film;
New nanocrystalline powder substrates for nitrides layer epitaxy
Keywords: 68.60.-p; 68.55.âA; 68.60.âp; GaN; MOVPE growth technique; Nanocrystalline powder substrates;
In situ measurement of the surface stress evolution during magnetron sputter-deposition of Ag thin film
Keywords: 68.60.-p; 68.60.âp; 68.55.âa; Ag thin film; Magnetron sputter deposition; Surface stress; Surface structure;
Substrate temperature influence on the properties of nanostructured ZnO transparent ultrathin films grown by PLD
Keywords: 68.60.-p; 81.15.Fg; 68.55.âa; 68.55.Ac; 68.60.âp; 68.37.Ps; 73.50.âh; 78.20.âe; Pulsed laser deposition; Thin films; Zinc oxide; Surface properties; Conductivity;
Stress and stress relief in dielectric thin films - the role of hydrogen
Keywords: 68.60.-p; 62.20.Mk; 81.40.Np; 68.35.Gy; 68.60.âp; 68.55.Ln; Thin film; Stress; Crack; ERD; Hydrogen; PECVD;
Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films
Keywords: 68.60.-p; 68.60.âp; 71.23.Cq; 72.40.+w; Amorphous semiconductors; Mechanical properties; Hardness; Indentation; Microindentation; Atomic force and scanning tunneling microscopy; Scanning electron microscopy; Absorbtion;
Thermal expansion coefficient of alumina films developed by oxidation of a FeCrAl alloy determined by a deflection technique
Keywords: 68.60.-p; 65.70.+y; 68.55.âa; 68.60.Dv; 68.60.âp; Thermal expansion coefficient; Alumina films; Deflection tests; FeCrAl;
A spectrometer for low energy heavy ion ERDA
Keywords: 68.60.-p; 29.40.Cs; 68.60.âp; 61.18.Bn; 82.80.Yc; ERDA; Silicon nitride; Membranes; Gas ionization detectors; Time-of-flight;
Effect of Ni interlayer on stress level of CoSi2 films in Co/Ni/Si(1 0 0) bi-layered system
Keywords: 68.60.-p; 68.35.âp; 68.60.âp; CoSi2; Stress; The solid solution; Lattice mismatch;
Deposition of indium nitride films by activated reactive evaporation process - a feasibility study
Keywords: 68.60.-p; 68.55.âa; 68.60.âp; 71.55.Eq; 82.80.Pv; Indium nitride; Activated reactive evaporation; XRD; SEM; Ellipsometry;
SnS films for photovoltaic applications: Physical investigations on sprayed SnxSy films
Keywords: 68.60.-p; 78.40.Fy; 68.60.âp; 61.10.Nz; 68.55.âa; 78.66.âw; Tin sulphide; Spray pyrolysis; Composition; Structure and electro-optical properties;
Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction
Keywords: 68.60.-p; 61.10.Nz; 68.60.âp; 61.85.+p; 82.80.Yc; Rutherford backscattering/channeling; Elastic strain; Tetragonal distortion; Lattice mismatich;
ERDA at the low energy limit
Keywords: 68.60.-p; 29.40.Cs; 68.60.âp; 61.18.Bn; 82.80.Yc; ERDA; Silicon nitride membranes; Gas ionization detectors; Time-of-flight;