Keywords: A1 جابجایی عظیم; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
مقالات ISI A1 جابجایی عظیم (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 جابجایی عظیم; A1. Crystal morphology; A1. Convection; A1. Mass transfer; A2. Growth from solutions; B1. Inorganic compounds;
Keywords: A1 جابجایی عظیم; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: A1 جابجایی عظیم; A1. Directional solidification; A1. Crystal structure; A1. Mass transfer; A1. Magnetic fields; A. Thermoelectric currents;
Keywords: A1 جابجایی عظیم; A1. Growth models; A1. Mass transfer; A1. Nucleation; A1. Supersaturated solutions;
Keywords: A1 جابجایی عظیم; A1. Surface processes; A1. Mass transfer; A1. Diffusion; B2. Semiconducting silicon;
Keywords: A1 جابجایی عظیم; A1. Growth models; A1. Mass transfer; A1. Heat transfer; A2. Growth from solutions; B1. Gas hydrate;
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Convection; A1. Mass transfer; Heat transfer; A2. Traveling heater method growth; A2. Traveling solvent zone growth; B2. Semiconducting II-VI materials;
Keywords: A1 جابجایی عظیم; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Segregation; B1. Bridgman technique; B1. Czochralski method
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: A1 جابجایی عظیم; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
Keywords: A1 جابجایی عظیم; A1. Solvents; A1. Mass transfer; A1. Diffusion; A2. Growth from solutions; A2. Ammonothermal crystal growth; B1. Gallium nitride;
Numerical simulation of flow and mass transfer for large KDP crystal growth via solution-jet method
Keywords: A1 جابجایی عظیم; A1. Numerical simulation; A2. Solution-jet method; B2. KDP crystal; A1. Fluid flow; A1. Mass transfer; A1. Morphology stability;
Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Fluid flows; A1. Magnetic fields; A1. Heat transfer; A1. Mass transfer; A2. Top seeded solution growth;
Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Towards optimization of ACRT schedules applied to the gradient freeze growth of cadmium zinc telluride
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Crystal morphology; A1. Convection; A1. Heat transfer; A1. Mass transfer; B1. Semiconducting II-VI materials;
The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique
Keywords: A1 جابجایی عظیم; A2. Single crystal growth; A2. Growth from high temperature solutions; A1. Computer simulation; A1. Mass transfer; B2. Semiconducting II-VI materials; B3. Terahertz devices;
Li2MoO4 crystal growth from solution activated by low-frequency vibrations
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Convection; A1. Mass transfer; A2. Growth from solutions; B1. Lithium compounds;
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Mass transfer; A1. Stresses; A3. Chemical vapor deposition; A3. Hydride Vapor Phase Epitaxy; B1. Aluminum nitride;
Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Fluid flows; A1. Magnetic fields; A1. Heat transfer; A1. Mass transfer; A2. Top seeded solution growth;
The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor
Keywords: A1 جابجایی عظیم; A1. Mass transfer; A1. Nonlinearity; A1. Arrhenius plot; A3. Metalorganic chemical vapor deposition; A3. Film uniformity; B1. Gallium nitride;
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
Keywords: A1 جابجایی عظیم; A1. Mass transfer; A1. Substrates; A2. Single crystal growth; B2. Semiconducting materials;
A simplified reaction model and numerical analysis for Si deposition from the SiHCl3-H2 system in vertical rotating disk reactors
Keywords: A1 جابجایی عظیم; A1. Fluid flows; A1. Growth models; A1. Heat transfer; A1. Mass transfer; A3. Chemical vapor deposition processes; B2. Semiconducting silicon;
Measurement of the diffusivity of CdTe in liquid Te at crystal growth temperatures
Keywords: A1 جابجایی عظیم; A1. Diffusion; A1. Mass transfer; A2. Growth from solutions; B1. Cadmium compounds;
Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Improvement of the thermal design in the SiC PVT growth process
Keywords: A1 جابجایی عظیم; A1. Fluid flows; A1. Mass transfer; A2. Growth from vapor; B2. Semiconducting silicon compounds
Modeling of axial vibrational control technique for CdTe VGF crystal growth under controlled cadmium partial pressure
Keywords: A1 جابجایی عظیم; A1. Fluid flows; A1. Heat transfer; A1. Mass transfer; A1. Computer simulation; A2. Gradient freeze technique;
High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system
Keywords: A1 جابجایی عظیم; A1. Mass transfer; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Magnetic fields; A1. Mass transfer; A2. Growth from high temperature solutions; B2. Semiconducting materials
Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells
Keywords: A1 جابجایی عظیم; A1. Convection; A1. Mass transfer; A1. Segregation; B2. multi-crystalline silicon; B3. Solar cells
Combined global 2D–local 3D modeling of the industrial Czochralski silicon crystal growth process
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Fluid flow; A1. Mass transfer; A2. Czochralski method; B2. Semiconducting silicon
Imaging transport phenomena during lysozyme protein crystal growth by the hanging drop technique
Keywords: A1 جابجایی عظیم; A1. Characterization; A1. Diffusion; A1. interfaces; A1. Mass transfer; A2. Growth from solutions; B1. Lysozyme; B1. Proteins
Perfection of NaNO3 single crystals grown by axial vibrational control technique in Czochralski configuration
Keywords: A1 جابجایی عظیم; A1. Crystal structure; A1. Fluid flows; A1. Heat transfer; A1. Mass transfer; A2. Czochralski method
Numerical simulation of Cz crystal growth in rotating magnetic field with crystal and crucible rotations
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Convection; A1. Fluid flows; A1. Mass transfer; A2. Magnetic field assisted Czochralski method
Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells
Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
Mushroom structure of GaN template for epitaxial growth of GaN
Keywords: A1 جابجایی عظیم; A1. Mass transfer; A2. Single crystal growth; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting III-V materials; B3. Light emitting diodes;
SiO gas emission and triple line dynamics of small silicon droplets on quartz
Keywords: A1 جابجایی عظیم; A1. Diffusion; A1. Etching; A1. Mass transfer; B1. Quartz; B2. Semiconductor melt
The effect of mass transfer on the temperature gradient of a crystal growing from melt
Keywords: A1 جابجایی عظیم; A1. Heat transfer; A1. Mass transfer; A1. Thermal gradient; A2. Growth from melt; B2. Semiconducting silicon
Problems and recent advances in melt crystal growth technology
Keywords: A1 جابجایی عظیم; A1. Heat transfer; A1. Mass transfer; A2. Growth from melt; A2. Scaling of crystal size; A2. Solid-state single crystal growth; B2. Dielectric materials
Numerical analysis of two-dimensional model of the traveling liquidus-zone method
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Mass transfer; A2. Growth from solutions; B2. Semiconducting materials;
3D epitaxial growth through holes for the fabrication of thin-film solar cells
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Fluid flows; A1. Mass transfer; A3. Chemical vapour deposition process; B2. Semiconducting silicon; B3. Solar cells;
Numerical simulation of oxygen transport during the CZ silicon crystal growth process
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process
Keywords: A1 جابجایی عظیم; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
A new approach for dopant distribution and morphological stability in crystals grown by the axial heat processing (AHP) technique
Keywords: A1 جابجایی عظیم; A1. Morphological stability; A1. Segregation; A1. Diffusion; A1. Mass transfer; A2. Axial heat processing; B1. Germanium silicon alloys;
3D numerical simulation for single crystal growth of potassium dihydrogen phosphate in a new solution growth system
Keywords: A1 جابجایی عظیم; A1 Growth models; A1. Computer simulation; A1. Fluid flows; A1. Mass transfer; A2. Growth from solutions; A2. Single crystal growth
A combined transport-kinetics model for the growth of renal calculi
Keywords: A1 جابجایی عظیم; A1. Convection; A1. Diffusion; A1. Growth models; A1. Mass transfer; A2. Growth from solutions; B1. Biological substances