Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Deep level transient spectroscopy; Spectroscopic resolution; SiC; Detection limit; Deep level defects;
مقالات ISI طیف سنجی پذیرش (ترجمه نشده)
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Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Organic light-emitting diodes; Electron injection layer; Electrical doping; Space-charge-limited current;
Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes
Keywords: طیف سنجی پذیرش; Intermediated connectors; Tandem organic light emitting diodes; Capacitance-voltage; Admittance spectroscopy;
Bulk-heterojunction solar cells with enriched polymer contents
Keywords: طیف سنجی پذیرش; Donor:acceptor ratio; PCE; Charge transport; Admittance spectroscopy;
Keywords: طیف سنجی پذیرش; Buffer layer; OLEDs; Admittance spectroscopy;
Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Bromide; Capacitance mediated electrochemical oscillator; Convection; Positive differential resistance
Keywords: طیف سنجی پذیرش; Electric properties; Dielectric properties; Admittance spectroscopy
Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Organic photodetectors; Squaraine dye; Charge transport; Trap-mediated charge recombination; Negative capacitance;
Keywords: طیف سنجی پذیرش; Defect state; Admittance spectroscopy; Organic semiconductor; 2,7-Dipyrenyl-9-phenyl-9-pyrenyl fluorene
Keywords: طیف سنجی پذیرش; Pulsed linear antenna microwave chemical vapor deposition; Nanocrystalline diamond; Raman spectroscopy; Admittance spectroscopy; n-Type conductive NCD;
Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Cross-sectional electron-beam induced current (EBIC); Cu(In,Ga)Se2 (CIGS); Deep-level transient spectroscopy (DLTS); Thin-film photovoltaics; Time-resolved photoluminescence (TRPL);
Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells
Keywords: طیف سنجی پذیرش; GaNAs/GaAs; Deep level transient spectroscopy; Admittance spectroscopy; Quantum wells;
Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum condition
Keywords: طیف سنجی پذیرش; Sb2Se3 thin-film solar cell; Post annealing treatment; Admittance spectroscopy; Conversion efficiency;
Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy
Keywords: طیف سنجی پذیرش; Sb2Se3 thin-film solar cell; Admittance spectroscopy; Defects; Recombination centers;
Study of MgCl2 activation treatment on the defects of CdTe solar cells by capacitance-voltage, drive level capacitance profiling and admittance spectroscopy techniques
Keywords: طیف سنجی پذیرش; Solar cells; Cadmium telluride; Magnesium chloride; Cadmium chloride; Capacitance-voltage; Admittance spectroscopy;
Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells
Keywords: طیف سنجی پذیرش; CZTSe solar cell; Defects states; Carrier density; Admittance spectroscopy; Ratio of Zn/Sn;
Characterization of electronic properties of natural type IIb diamonds
Keywords: طیف سنجی پذیرش; Natural diamond; Boron; Admittance spectroscopy; Charge carrier concentration; Activation energy;
The effects of UV-ozone treated ultra-thin Li2CO3-doped NiO film as the anode buffer layer on the electrical characteristics of organic light-emitting diodes
Keywords: طیف سنجی پذیرش; OLEDs; Buffer layer; Admittance spectroscopy;
Effects of the Cu/(Ga+In) ratio on the bulk and interface properties of Cu(InGa)(SSe)2 solar cells
Keywords: طیف سنجی پذیرش; AS; admittance spectroscopy; CIGSe; copper indium gallium diselenide; CGI; Cu/(In+Ga) ratio; CV; capacitance-voltage; DLCP; drive-level capacitance profiling; Eg; bandgap; FF; fill factor; JSC; short-circuit current density; TCO; transparent conducting
Analysis of Cu2ZnSnS4/CdS based photovoltaic cell: A numerical simulation approach
Keywords: طیف سنجی پذیرش; Thin film photovoltaics; CZTS; SCAPS; Cross-over; Admittance spectroscopy;
Effects of NaF evaporation during low temperature Cu(In,Ga)Se2 growth
Keywords: طیف سنجی پذیرش; Copper Indium gallium selenide; Post-deposition treatment; Admittance spectroscopy; Alkali; Sodium; SIMS; ICP-MS;
Investigation of electron transport properties in Li2CO3-doped Bepp2 thin films
Keywords: طیف سنجی پذیرش; Electron transport; Li2CO3-doped Bepp2 films; Admittance spectroscopy;
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Keywords: طیف سنجی پذیرش; GeSn; Electrical characterization; I–V characteristics; C–V characteristics; Numerical simulation; Admittance spectroscopy
Bipolar resistive switching and charge transport in silicon oxide memristor
Keywords: طیف سنجی پذیرش; Memristor; Silicon oxide; Magnetron sputtering; Resistive switching; Charge transport; Admittance spectroscopy
Temperature dependent current-voltage and admittance spectroscopy on heat-light soaking effects of Cu(In,Ga)Se2 solar cells with ALD-Zn(O,S) and CBD-ZnS(O,OH) buffer layers
Keywords: طیف سنجی پذیرش; Cu(In; Ga)Se2; Cd-free buffer layer; Thin film solar cell; Admittance spectroscopy; Heat light soaking; ALD-Zn(O,S); CBD-ZnS(O,OH);
The effect of tin addition on the electrical conductivity of Sn-doped LaBaMnO3
Keywords: طیف سنجی پذیرش; La0.67Ba0.33Mn1−xSnxO3; Perovskite; Admittance spectroscopy; Hopping
Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer
Keywords: طیف سنجی پذیرش; Diamond; Admittance spectroscopy; Phosphorus donor; Deep dopant; Debye tail; Depletion layer
The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)
Keywords: طیف سنجی پذیرش; Au/n-GaAs SBDs; Admittance spectroscopy; Interface states; Series resistance
Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Keywords: طیف سنجی پذیرش; GeSn; MOS; Interface states; Admittance spectroscopy; Electrical characterization; Numerical simulation;
Improved charge transport in inverted polymer solar cells using surface engineered ZnO-nanorod array as an electron transport layer
Keywords: طیف سنجی پذیرش; Inverted polymer solar cell; ZnO; Surface modification; Admittance spectroscopy
Analysis of the relationship between the kink effect and the indium levels in MOS transistors
Keywords: طیف سنجی پذیرش; Low frequency dispersion; Admittance spectroscopy; Electrical characterization; MOSFET; Indium deep traps; Kink effect;
Admittance spectroscopy of CuPC-Si and CoPC-Si heterostructures
Keywords: طیف سنجی پذیرش; Phthalocyanines; Admittance spectroscopy; Raman spectra; Thin films; Organic-inorganic structures;
Modelling and measurement of the metastable defect distribution in chalcopyrite-based thin film solar cells
Keywords: طیف سنجی پذیرش; Modelling; Metastabilities; Admittance spectroscopy
Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells
Keywords: طیف سنجی پذیرش; CIGS; Buffer; Current transport; In2S3; Solar cell; Interface states; Admittance spectroscopy
Defect studies in Cu2ZnSnSe4 and Cu2ZnSn(Se0.75S0.25)4 by admittance and photoluminescence spectroscopy
Keywords: طیف سنجی پذیرش; Cu2ZnSnSe4; Cu2ZnSn(Se0.75S0.25)4; Admittance spectroscopy; Photoluminescence spectroscopy; Defects
Characterisation of defects in p-GaN by admittance spectroscopy
Keywords: طیف سنجی پذیرش; GaN; Threading dislocations; Mg doping; Defects; Admittance spectroscopy
Effect of CsF buffer layer on charge-carrier mobility in organic light-emitting diodes based on a polyfluorene copolymers by admittance spectroscopy
Keywords: طیف سنجی پذیرش; CsF buffer layer; Admittance spectroscopy; Charge-carrier mobility; Organic light-emitting diodes
The effects of tris(2-phenylpyridine) iridium on the hole injection and transport properties of 4,4â²,4â³-tri(N-carbazolyl)-triphenylamine thin films
Keywords: طیف سنجی پذیرش; Charge injection; Charge transport; Mobility; Admittance spectroscopy;
The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
Keywords: طیف سنجی پذیرش; Interface state; Capacitance; Schottky diode; MIS diode; Heterojunction diode; Admittance spectroscopy
Low frequency dielectric loss of metal/insulator/organic semiconductor junctions in ambient conditions
Keywords: طیف سنجی پذیرش; Metal–oxide–organic semiconductor junctions; Dielectric relaxation; Anomalous diffusion; Admittance spectroscopy
Small-signal response of nanocrystalline-titanium dioxide/poly(3-hexylthiophene) heterojunction solar cells
Keywords: طیف سنجی پذیرش; Solar cells; Bulk heterojunction; Titania; Semiconducting polymers; Interface effects; Admittance spectroscopy
Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures
Keywords: طیف سنجی پذیرش; Chalcopyrite solar cells; Rapid thermal processing; Suns-VOC-analysis; Admittance spectroscopy
Dependence of Se beam pressure on defect states in CIGS-based solar cells
Keywords: طیف سنجی پذیرش; Cu(In,Ga)Se2; Molecular beam epitaxy; Defect state density; Admittance spectroscopy
Influence of Ga content on defects in CuInxGa1 − xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy
Keywords: طیف سنجی پذیرش; CIGS; DOS; Admittance spectroscopy; Photocurrent spectroscopy
Temperature and electric field dependent hole mobility in a polyfluorene copolymer
Keywords: طیف سنجی پذیرش; Hole mobility; Transport properties; Conjugated polymers; Polyfluorene; Admittance spectroscopy
Analysis of deep level parameters in irradiated silicon detectors
Keywords: طیف سنجی پذیرش; Silicon detector; Deep level; Admittance spectroscopy; Radiation damage; Charge collection; PN junction;
Titanium effects on the transport properties in La0.7Sr0.3Mn1 â xTixO3
Keywords: طیف سنجی پذیرش; 71.30.+h; 72.20âi; 72.80.âr; 72.15.âv; Ti-doped perovskite; La0.7Sr0.3MnO3; Admittance spectroscopy; Hopping;
A method to measure resistivity, mobility, and absorber thickness in thin-film solar cells with application to CdTe devices
Keywords: طیف سنجی پذیرش; Admittance spectroscopy; Capacitance–voltage; Mobility; Absorber thickness; CdTe; Back contact
Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements
Keywords: طیف سنجی پذیرش; Cu(In,Ga)Se2; In2S3, Buffer layers; Traps levels; Admittance spectroscopy
Admittance spectroscopic analysis of organic light emitting diodes with the CFX plasma treatment on the surface of indium tin oxide anodes
Keywords: طیف سنجی پذیرش; Organic light emitting diodes; Admittance spectroscopy; CFX treatment; Barrier height