Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy
Keywords: فوتولومینسانس (PL); InP; GaP; InGaP; Self-assembled quantum dots (SAQDs); Metal-organic vapor phase epitaxy (MOVPE); Atomic force microscopy (AFM); Photoluminescence (PL);