کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675887 | 1008985 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence studies of CdTe films and junctions
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence studies of CdTe films and junctions Photoluminescence studies of CdTe films and junctions](/preview/png/1675887.png)
چکیده انگلیسی
Device quality CdTe films and junctions have been studied using low-temperature photoluminescence (PL) measurements. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. The CdTe films and junctions were prepared under various deposition conditions to determine the effect of film deposition and solar cell fabrication parameters, such as the effect of oxygen, and chloride treatment. A PL band located at 1.232 eV has been attributed to the presence of oxygen. This band is present only in as-deposited samples excited at the CdTe surface. Samples annealed in the presence of CdCl2 exhibit a single PL band located at 1.42 eV. A model explaining the behavior of these bands is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 6107–6111
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 6107–6111
نویسندگان
S. Vatavu, H. Zhao, V. Padma, R. Rudaraju, D.L. Morel, P. Gaşin, Iu. Caraman, C.S. Ferekides,