
High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs
Keywords: سیلیکون روی مقره (SOI); Silicon-on-insulator (SOI); Fully-depleted SOI MOSFETs; Low-frequency noise; Strain engineering; Low-field mobility; Contact etch stop layer (CESL); Strained SOI (sSOI)