کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676900 | 1518093 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process](/preview/png/1676900.png)
چکیده انگلیسی
Dislocation behaviors in SiGe-on-insulator (SGOI) layers during the Ge condensation process are systematically studied by employing transmission electron microscopy, X-ray diffraction, Raman spectroscopy and secondary ion mass spectroscopy, in order to obtain insights into sufficient relaxation of SGOI layers with good crystal quality. It is found that misfit dislocations (MDs) are generated in the ramping up process in Ge condensation, whereas they disappear and threading dislocations (TDs) are generated after the oxidation process. This TD generation is attributable to the fact that the MDs were fragmented into dislocation half-loops and then rose to the SiGe surface. Thus, suppression of the rising motion is a key to fabricating high-quality SGOI substrates by the Ge-condensation technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 251-255
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 251-255
نویسندگان
Tsutomu Tezuka, Yoshihiko Moriyama, Shu Nakaharai, Naoharu Sugiyama, Norio Hirashita, Eiji Toyoda, Yoshiji Miyamura, Shin-ichi Takagi,