کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10147685 | 1646496 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-k amorphous SrTa2O6 (STA) thin films were successfully deposited by rf magnetron sputtering for gate insulators in thin-film transistor (TFT). Practical STA thin films with high dielectric constant of 41.8, wide band gap of 4.58â¯eV, and low leakage current of ~10â8 A/cm2 were obtained through by optimal sputtering condition. The TFTs with amorphous InGaZnO (IGZO) as a channel and STA as a gate insulator were fabricated and investigated for thinning effects of gate insulator on transfer characteristic. The IGZO-TFT with 70-nm-thick STA achieved high performance switching properties; (mobility of 14.9â¯cm2/(V·s), threshold voltage of 0.6â¯V, sub-threshold swing of 111â¯mV/decade, and on/off ratio of 1.0â¯Ãâ¯1010). These characteristics are due to the large gate capacitance of 4.6â¯Ãâ¯10â7â¯F/cm2 and low gate leakage current from use of STA.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 665, 1 November 2018, Pages 173-178
Journal: Thin Solid Films - Volume 665, 1 November 2018, Pages 173-178
نویسندگان
Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kiyoshi Uchiyama,