Morphologies of one-dimensional GaN nanostructures grown through technology

GaN nanoribbons, nanowires and nanorods were synthesized on sapphire, quartz and silicon substrates through a novel two-step growth technology. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and transmission electron microscopy (TEM) were used to characterize the samples. SEM images revealed the morphologies of the as-synthesized one-dimensional nanostructures included twisted nanoribbons, straight and short nanorods. The structure characterization confirmed all the grown one-dimensional materials are hexagonal wurtzite GaN.