کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669688 | 1008781 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride
ترجمه فارسی عنوان
تشریح توزیع حفره عمیق پس از آنیلینگ حرارتی سیلیکون هلیم و نیترید گالیم
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کلمات کلیدی
بیضه سنجی طیف سنجی، یون لنز انلینگ، حفره، مشخصات عمق،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted with high-fluence helium ions (2-6 Ã 1016 cmâ 2) at energies of 20-30 keV. Thermal annealings at 650-1000 °C, 1 h were performed on the Si samples and rapid thermal annealings at 600-1000 °C, 120 s under N2 were performed on the GaN samples. The as-implanted samples and the near-surface cavity distributions of the annealed samples were investigated with variable angle spectroscopic ellipsometry. In-depth defect profiles and cavity profiles can be best described with multiple independent effective medium sublayers of varying ratio of single-crystal/void. The number of sublayers was chosen to maximize the fit quality without a high parameter cross-correlation. The dependence of the implantation fluence, oxide layer thickness and annealing temperature on the cavity distribution was separately investigated. The ellipsometric fitted distributions were compared and cross-checked with analyses of transmission electron micrographs where the average surface cavity was determined sublayer by sublayer. The in-depth profiles were also compared with simulations of He and vacancy distributions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 571, Part 3, 28 November 2014, Pages 567-572
Journal: Thin Solid Films - Volume 571, Part 3, 28 November 2014, Pages 567-572
نویسندگان
B. Fodor, F. Cayrel, E. Agocs, D. Alquier, M. Fried, P. Petrik,