کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669744 | 1008786 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of pentacene-based films prepared using a heated tungsten mesh
ترجمه فارسی عنوان
خواص فیلم های مبتنی بر پنتان ساخته شده با استفاده از مش تنگستن گرم
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
A heated tungsten (W) mesh, set between a pentacene source and a substrate in a vacuum chamber, was used to prepare a bulk-phase pentacene film and a pentacene-based organic semiconductor film. Since the pentacene molecules come into contact with the heated W mesh before reaching the substrate, their thermal energy is increased prior to deposition. As the mesh temperature was increased from 23 to 1200 °C, the intensity ratio of bulk to thin-film phases increased from 0 to 9.7. Above 1300 °C there is a notable decomposition reaction, the products of which were identified as dihydropentacene, p-distrylbenzene, and 2,2â²-dimethyl-1,1â²-binaphthalene. These decomposed precursors are expected to provide a potential source of large graphene sheets and graphene nanoribbons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 570, Part A, 3 November 2014, Pages 20-26
Journal: Thin Solid Films - Volume 570, Part A, 3 November 2014, Pages 20-26
نویسندگان
Akira Heya, Naoto Matsuo,