Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors

► Pulsed-RF PECVD for low temperature (150 °C) preparation of silicon nitride. ► Pulsed-RF PECVD leads to longer surface diffusion length during growth. ► This in turn leads to film smoothening and densification at low temperatures. ► Microstructural improvement leads to higher breakdown voltage. ► Silicon nitride as TFT gate dielectric leads to excellent device performance.